HermeS®
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Technical Details of HermeS®

With superior reliability, excellent RF performance, high optical transparency and the option of anodic bonding with silicon, HermeS® Hermetic TGV Wafers have all the right properties to create compact and extremely durable MEMS-powered devices and sensors.

The range of exceptional HermeS® features

Countering threats to efficiency

The combination of strong materials and glass-to-metal technology helps MEMS equipment handle multiple threats, from repeated medical sterilization procedures to corrosive industrial production lines.

Longer-lasting components

The high mechanical, thermal and chemical resistance of HermeS® glass wafers makes a significant contribution to longer service life for MEMS devices.

Miniaturization options

Since SCHOTT HermeS® Hermetic TGV Wafers can be attached directly onto a silicon MEMS, this allows considerable miniaturization in device design – up to 80% smaller than ceramic MEMS devices.

Quality assurance

Compared to TSV (Through Silicon Vias) and other TGVs, HermeS® wafers enable superior processing and quality control in the production of MEMS devices and final applications by matching the CTE of the glass material and the solid metal vias.
Wafer Specifications
Glass Specifications

Wafer Specifications

Technical data of wafer
Wafer thickness  500-1.600 μm ±20 μm
Wafer size  4“, 6“, 8“
Via pitch  min. 400 μm
Via diameter  80 μm
Via materials  Tungsten (W) – combined with BOROFLOAT® 33
(upon request: AF 32® eco)
Hermeticity  Leak rate ≤ 1 × 10–9 Pa · m3/s, [≤ 1 × 10–8 mbar l/s]

Glass Specifications

Technical data of glass
Glass material Borofloat®33 AF 32®eco 33
Coefficient of thermal
expansion (CTE)		 3.25 x 10-6/K
(match to Si)		 3.2 x 10-6/K
(match to Si)
Dielectric constant @ 1MHz 4.6 5.1
Refractive index (@ 600 nm) 1.47 1.51

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Whether you need more information, samples, a quote, or advice for a project, we would be delighted to talk to you.

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